elektronische bauelemente SSE75N03 75 a, 25 v, r ds(on) 4.5 m n-channel enhancement mode power mos.fet 01-june-2005 rev. a page 1 of 4 rohs compliant product a suffix of ?-c? specifies halogen free description the SSE75N03 used advanced design and pr ocess to achieve low gate char ge, low on-resistance and fast switching performance. the through-hole version (to-220) is available for low-profile applications and suited for low voltage applications such as dc/dc converters. features z low gate charge z simple drive requirement z fast switching package dimensions millimeter millimeter ref. min. max. ref. min. max. a 4.40 4.80 c1 1.25 1.45 b 0.76 1.00 b1 1.17 1.47 c 0.36 0.50 l 13.25 14.25 d 8.60 9.00 e 2.54 ref. e 9.80 10.4 l1 2.60 2.89 l4 14.7 15.3 ? 3.71 3.96 l5 6.20 6.60 a1 2.60 2.80 absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 25 v gate-source voltage v gs 20 v drain current,v gs @ 4.5v i d @ta=25 75 a drain current,v gs @ 4.5v i d @ta=100 62.5 a pulsed drain current 1 i dm 350 a total power dissipation p d @tc=25 96 w linear derating factor 0.76 w/ c single pulse avalanche energy 2 e as 400 mj single pulse avalanche current i as 40 a operating junction and st orage temperature range tj, tstg -55 ~ +150 c thermal data parameter symbol value unit thermal resistance junction-case max. r j-case 1.3 c/w thermal resistance junction-ambient max. r j-amb 62 c/w www.datasheet.co.kr datasheet pdf - http://www..net/
elektronische bauelemente SSE75N03 75 a, 25 v, r ds(on) 4.5 m n-channel enhancement mode power mos.fet 01-june-2005 rev. a page 2 of 4 electrical characteristics (tj = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 25 - - v v gs =0, i d =250ua breakdown voltage temp. coefficient bv dss / tj - 0.02 - v/ c reference to 25 , i d =1ma gate threshold voltage v gs(th) 1.0 - 3.0 v v ds =v gs , i d =250ua forward transconductance g fs - 29 - s v ds =10v, i d =30a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current(tj=25 ) - - 1 ua v ds =25v, v gs =0 drain-source leakage current(tj=150 ) i dss - - 25 ua v ds =20v, v gs =0 - 3.7 4.5 v gs =10v, i d =40a static drain-source on-resistance 3 r ds(on) - 6.0 7 m ? v gs =4.5v, i d =30a total gate charge 3 q g - 33 - gate-source charge q gs - 9 - gate-drain (?miller?) change q gd - 15 - nc i d =30a v ds =20v v gs =4.5v turn-on delay time 3 t d(on) - 10 - rise time t r - 80 - turn-off delay time t d(off) - 37 - fall time t f - 85 - ns v ds =15v i d =30a v gs =10v r g =3.3 ? r d =0.5 ? input capacitance c iss - 2070 - output capacitance c oss - 990 - reverse transfer capacitance c rss - 300 - pf v gs =0v v ds =25v f=1.0mhz source-drain diode parameter symbol min. typ. max. unit test conditions forward on voltage 2 v sd - - 1.5 v i s =20a, v gs =0v reverse recovery time 3 t rr - 50 - ns reverse recovery charge q rr - 51 - nc i s =30a, v gs =0v di/dt=100a/us notes: 1. pulse width limited by safe operating area. 2. staring tj=25 c, v dd =20v, l=0.1mh, r g =25 , i as =10a. 3. pulse width Q 300us, duty cycle Q 2%. www.datasheet.co.kr datasheet pdf - http://www..net/
elektronische bauelemente SSE75N03 75 a, 25 v, r ds(on) 4.5 m n-channel enhancement mode power mos.fet 01-june-2005 rev. a page 3 of 4 characteristic curve www.datasheet.co.kr datasheet pdf - http://www..net/
elektronische bauelemente SSE75N03 75 a, 25 v, r ds(on) 4.5 m n-channel enhancement mode power mos.fet 01-june-2005 rev. a page 4 of 4 characteristic curve f=1.0mhz www.datasheet.co.kr datasheet pdf - http://www..net/
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